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| inchange semiconductor product specification silicon npn power transistors BD249/a/b/c description ? with to-3pn package ? complement to type bd250/a/b/c ? 125 w at 25c case temperature ? 25 a continuous collector current pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit BD249 45 BD249a 60 BD249b 80 v ceo collector-emitter voltage BD249c open base 100 v BD249 55 BD249a 70 BD249b 90 v cbo collector-base voltage BD249c open base 115 v v ebo emitter-base voltage open collector 5 v i c collector current 25 a i cm collector current-peak 40 a i b base current 5 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature -65~150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.0 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BD249/a/b/c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD249 45 BD249a 60 BD249b 80 v (br)ceo collector-emitter breakdown voltage BD249c i c =30ma ;i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =15a ;i b =1.5a 1.8 v v cesat-2 collector-emitter saturation voltage i c =25a ;i b =5a 4 v v be-1 base-emitter on voltage i c =15a ; v ce =4v 2 v v be-2 base-emitter on voltage i c =25a ; v ce =4v 4 v BD249/249a v ce =30v; i b =0 i ceo collector cut-off current BD249b/249c v ce =60v; i b =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =1.5a ; v ce =4v 25 h fe-2 dc current gain i c =15a ; v ce =4v 10 h fe-3 dc current gain i c =25a ; v ce =4v 5 switching times t on turn-on time 0.3 | s t off turn-off time i c =1a; i b1 =-i b2 =0.5a r l =5 |? 0.9 | s inchange semiconductor product specification 3 silicon npn power transistors BD249/a/b/c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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